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dc.contributor.authorChen, Jui-Yuanen_US
dc.contributor.authorWu, Min-Cien_US
dc.contributor.authorTing, Yi-Hsinen_US
dc.contributor.authorLee, Wei-Cheen_US
dc.contributor.authorYeh, Ping-Hungen_US
dc.contributor.authorWu, Wen-Weien_US
dc.date.accessioned2020-10-05T02:01:07Z-
dc.date.available2020-10-05T02:01:07Z-
dc.date.issued2020-10-01en_US
dc.identifier.issn1359-6462en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.scriptamat.2020.06.061en_US
dc.identifier.urihttp://hdl.handle.net/11536/155153-
dc.description.abstractNanowire (NW) structure is superior at defining the direction of device due to its one-dimension feature. In this work, the p-n ZnO NWs were successfully synthesized, and were able to vertically grow on Ta2O5 substrate. Thus, the well-performed Au/p-n ZnO NWs/Ta2O5/Au one-diode one-memoristor device was fabricated. The p-n ZnO NWs not only exhibited excellent rectifying behavior, but also played the role of oxygen storing during filaments formation. Therefore, the low-leakage device aimed to build high-density crossbar arrays which was required for accelerating the combination of 5 G with AI in near future applications. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectNanowiresen_US
dc.subjectRRAMen_US
dc.subjectDiodeen_US
dc.subjectZnOen_US
dc.subjectHomojunctionen_US
dc.titleApplications of p-n homojunction ZnO nanowires to one-diode one-memristor RRAM arraysen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.scriptamat.2020.06.061en_US
dc.identifier.journalSCRIPTA MATERIALIAen_US
dc.citation.volume187en_US
dc.citation.spage439en_US
dc.citation.epage444en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000551272900078en_US
dc.citation.woscount0en_US
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