標題: Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors
作者: Huang, Shin-Ping
Chen, Hong-Chih
Chen, Po-Hsun
Zheng, Yu-Zhe
Chu, Ann-Kuo
Shih, Yu-Shan
Wang, Yu-Xuan
Wu, Chia-Chuan
Chen, Yu-An
Sun, Pei-Jun
Huang, Hui-Chun
Lai, Wei-Chih
Chang, Ting-Chang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Thin film transistors;Logic gates;Silicon;Degradation;Stress;Grain size;Reliability;Excimer laser annealing (ELA) energy;low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs);protrusion;self-heating effect
公開日期: 1-Aug-2020
摘要: The extent of the poly-silicon crystalline protrusion, a result of differences in excimer laser annealing (ELA), affects the performance and reliability of thin-film transistors (TFTs). This study investigates the degradation mechanism of the low-temperature polycrystalline silicon (LTPS) TFT devices with differences in crystalline protrusion under self-heating stress (SHS). Higher ELA energy will induce higher protrusion height in the interface between the poly-silicon and gate insulator (GI). This surface morphology leads to serious charge trapping into the GI layers; in contrast, the smallest degradation after SHS can be seen in the devices with the lowest protrusion height. This indicates that the degradation is caused by the surface morphology between the poly-Si and GI interface. In addition, the COMSOL simulation results confirm that the large electric field in the GI layer appears in the rough surface morphology devices; therefore, choosing the appropriate ELA energy of the poly-Si is beneficial for the applications of the driving TFT in organic light-emitting diode (OLED) display in the manufacturing industry.
URI: http://dx.doi.org/10.1109/TED.2020.3005366
http://hdl.handle.net/11536/155193
ISSN: 0018-9383
DOI: 10.1109/TED.2020.3005366
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 67
Issue: 8
起始頁: 3163
結束頁: 3166
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