完整後設資料紀錄
DC 欄位語言
dc.contributor.authorTu, Hong-Yien_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsao, Yu-Chingen_US
dc.contributor.authorTai, Mao-Chouen_US
dc.contributor.authorTsai, Yu-Linen_US
dc.contributor.authorHuang, Shin-Pingen_US
dc.contributor.authorZheng, Yu-Zheen_US
dc.contributor.authorWang, Yu-Xuanen_US
dc.contributor.authorLin, Chih-Chihen_US
dc.contributor.authorKuo, Chuan-Weien_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorWu, Chia-Chuanen_US
dc.contributor.authorChien, Ya-Tingen_US
dc.contributor.authorHuang, Hui-Chunen_US
dc.date.accessioned2020-10-05T02:01:10Z-
dc.date.available2020-10-05T02:01:10Z-
dc.date.issued2020-09-30en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1361-6463/ab9918en_US
dc.identifier.urihttp://hdl.handle.net/11536/155202-
dc.description.abstractDegradation in low-temperature polycrystalline-silicon thin-film transistors after electrical stress was thoroughly investigated in this work. Main channel degradation, abnormal hump generation and hysteresis appearing in the hump region can be observed after positive bias stress. Furthermore, the difference in subthreshold swing (SS) values between forward/reverse sweep is observed. The electron trapping into the gate insulator (GI) dominates the main degradation and the hump generation. Additionally, the difference in SS values which appears in the hump region is attributed to the interface traps and the hysteresis is caused by electron trapping/detrapping into GI.en_US
dc.language.isoen_USen_US
dc.subjectlow-temperature polycrystalline-silicon thin-film transistoren_US
dc.subjectdual sweep operationen_US
dc.subjectabnormal humpen_US
dc.subjecthysteresisen_US
dc.titleAbnormal hysteresis formation in hump region after positive gate bias stress in low-temperature poly-silicon thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1361-6463/ab9918en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.citation.volume53en_US
dc.citation.issue40en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000553715200001en_US
dc.citation.woscount0en_US
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