標題: | Abnormal C-V Hump Effect Induced by Hot Carriers in Gate Length-Dependent p-Type LTPS TFTs |
作者: | Huang, Shin-Ping Chen, Po-Hsun Tsao, Yu-Ching Chen, Hong-Chih Zheng, Yu-Zhe Chu, Ann-Kuo Shih, Yu-Shan Wang, Yu-Xuan Wu, Chia-Chuan Shih, Yao-Kai Chung, Yu-Hua Chen, Wei-Han Wang, Terry Tai-Jui Zhang, Sheng-Dong Chang, Ting-Chang 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Stress;Logic gates;Hot carriers;Thin film transistors;Degradation;Length measurement;Current measurement;Gate length-dependent;hot carrier effect;hump effect;low-temperature polysilicon (LTPS) thin-film transistors (TFTs) |
公開日期: | 1-十一月-2019 |
摘要: | We investigate the abnormal current-voltage (C-V) hump effect of p-type low-temperature polysilicon (LTPS) thin-film transistors (TFTs) which have undergone high current operations. Experimental results indicate localized electron trapping in the gate insulator (GI), which is carried out near the drain. The ON-current ( ${I}_{ \mathrm{\scriptscriptstyle ON}}$ ) enhancement is due to the reduction of effective length, and the OFF-current ( ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) decrease as the electron tunneling path distance increases. These can be observed after hot carrier stress in current characteristics. The C-V measurements demonstrate that the threshold voltage ( ${V}_{\text {th}}$ ) shift is associated with the gate length. In addition, capacitance-voltage measurements also show that this localized trapping region remains the same in length, regardless of channel length. Hence, a model is proposed to explain how the electric field, which is gate length-dependent, affects the source side of the device, and then lowers the source barrier height. This leads to bulk leakage, which causes the subthreshold swing degradation at device scale down. |
URI: | http://dx.doi.org/10.1109/TED.2019.2942149 http://hdl.handle.net/11536/153229 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2019.2942149 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 66 |
Issue: | 11 |
起始頁: | 4764 |
結束頁: | 4767 |
顯示於類別: | 期刊論文 |