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dc.contributor.authorWang, Yu-Xuanen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorHuang, Shin-Pingen_US
dc.contributor.authorTai, Mao-Chouen_US
dc.contributor.authorZheng, Yu-Zheen_US
dc.contributor.authorWu, Chia-Chuanen_US
dc.contributor.authorSze, Simonen_US
dc.date.accessioned2020-10-05T02:01:28Z-
dc.date.available2020-10-05T02:01:28Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-4031-5en_US
dc.identifier.issn2380-9248en_US
dc.identifier.urihttp://hdl.handle.net/11536/155247-
dc.description.abstractIn this work a novel device structure aiming to suppress the degradations under bending in flexible devices is demonstrated, named as a wing-shape TFT. Investigations of the electrical characteristics and reliabilities are supported by simulations, theoretical calculations, and structural discussions. First, through both electrical and mechanical stress simulation, the regions of degradation are confirmed to occur at the corner of the gate insulator. After long term mechanical stress, behaviors including an abnormal hump, serious threshold voltage (Vth) shifts, on-current increase, and off-current decrease are observed. By extending the active layer, also serving as a stress relief layer, removes the degradation regions away from the main channel. Therefore, the reliability of the devices is dramatically improved. The geometries of the wings in wing-shape TFTs are also in consideration. From results, with different wing lengths, a similar improvement of the reliability is shown, but the on current is enhanced when the wing length is extended. These phenomena are realized as a result of the difference in the effective width. The proposed wing-shape LTPS TFT has its potential and benefits for future flexible displays.en_US
dc.language.isoen_USen_US
dc.titleA Novel Structural Design Serving as a Stress Relief Layer for Flexible LTPS TFTsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000553550000026en_US
dc.citation.woscount0en_US
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