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dc.contributor.authorLo, Tien-Yuen_US
dc.contributor.authorHung, Chung-Chihen_US
dc.date.accessioned2014-12-08T15:21:48Z-
dc.date.available2014-12-08T15:21:48Z-
dc.date.issued2012-04-01en_US
dc.identifier.issn0925-1030en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10470-011-9754-yen_US
dc.identifier.urihttp://hdl.handle.net/11536/15528-
dc.description.abstractA CMOS transconductor for wide tuning range filter application is presented. The linear transconductor is designed based on the flipped-voltage follower (FVF) circuit and can work in the weak, moderate, and strong inversion regions to maximize the transconductance tuning range. The transconductance tuning can be achieved by changing the bias current of the active resistor, and a ratio of 28 is obtained. The transconductor was evaluated by using TSMC 0.18 mu m CMOS process, and the total harmonic distortion (THD) of -56 dB can be obtained by giving a 12 MHz 0.4 Vpp input swing signal. In the design, the maximum power consumption is 2 mW with the transconductance of 1.1 mS under a 1.8 V supply voltage.en_US
dc.language.isoen_USen_US
dc.subjectTransconductoren_US
dc.subjectTHDen_US
dc.subjectFVFen_US
dc.subjectCMOSen_US
dc.titleAn active device based wide tuning range CMOS transconductoren_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s10470-011-9754-yen_US
dc.identifier.journalANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSINGen_US
dc.citation.volume71en_US
dc.citation.issue1en_US
dc.citation.spage119en_US
dc.citation.epage122en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000301376100014-
dc.citation.woscount0-
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