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dc.contributor.authorHo, Wen-Chiehen_US
dc.contributor.authorLiu, Yao-Hsingen_US
dc.contributor.authorWu, Wen-Hsuanen_US
dc.contributor.authorHuang Chen, Sung-Wenen_US
dc.contributor.authorTzou, Jerryen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorSun, Chia-Weien_US
dc.date.accessioned2020-10-05T02:01:52Z-
dc.date.available2020-10-05T02:01:52Z-
dc.date.issued2020-08-01en_US
dc.identifier.issn2073-4352en_US
dc.identifier.urihttp://dx.doi.org/10.3390/cryst10080712en_US
dc.identifier.urihttp://hdl.handle.net/11536/155304-
dc.description.abstractIn this paper, we fabricated Gallium Nitride (GaN) verticalp-i-ndiodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained. The vertical GaNp-i-ndiode showed a low specific on-resistance of 0.85 m ohm-cm(2)and high breakdown voltage (BV) of 2.98 kV. The high breakdown voltage can be attributed to the thick GaN epi-layer and corresponds to the mesa structure. Improvement of the device characteristics by the mesa structure was investigated using device simulations. We proved that a deeper mesa depth is able to decrease the electric field at the bottom of the mesa structure. Furthermore, a smaller mesa bevel angle will assist the BV up to 2.98 kV at a 60 degrees bevel angle. Our approach demonstrates structural optimization of GaN verticalp-i-ndiodes is useful to improve the device performance.en_US
dc.language.isoen_USen_US
dc.subjectGallium Nitride (GaN)en_US
dc.subjectverticalp-i-ndiodesen_US
dc.subjectFS-GaN substrateen_US
dc.subjectvertical diodeen_US
dc.titleThe Study of High Breakdown Voltage Vertical GaN-on-GaNp-i-nDiode with Modified Mesa Structureen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/cryst10080712en_US
dc.identifier.journalCRYSTALSen_US
dc.citation.volume10en_US
dc.citation.issue8en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000564660500001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles