完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, Po-Hanen_US
dc.contributor.authorCheng, Hao-Chungen_US
dc.contributor.authorChen, Po-Hungen_US
dc.date.accessioned2020-10-05T02:01:56Z-
dc.date.available2020-10-05T02:01:56Z-
dc.date.issued2020-09-01en_US
dc.identifier.issn1549-7747en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TCSII.2020.3008972en_US
dc.identifier.urihttp://hdl.handle.net/11536/155359-
dc.description.abstractThis letter proposes a fully integrated step-down switched-capacitor (SC) DC-DC converter using 0.18-mu m CMOS technology for system-on-chip applications. The proposed stepdown switched-capacitor DC-DC converter used two control mechanisms: the switch array modulation technique to regulate the output voltage and the voltage ripple modulation technique to adjust the output voltage ripple of the converter as the loading current varied. As a result, the proposed converter could generate a regulated output voltage with low voltage ripple. The converter core performed at conversion ratios of 1/3 and 1/2 under an input voltage of 1.8 V. The measurement results on 180-nm technology showed that the proposed fully integrated step-down switched-capacitor DC-DC converter could achieve a peak power conversion efficiency of 74.1% and maintain power conversion efficiency at levels over 70% within loading ranges between 1.4 and 5 mA. The output voltage ripple was controlled at levels under 63.4 mV within a loading current ranging between 0.1 and 5 mA.en_US
dc.language.isoen_USen_US
dc.subjectVoltage ripple modulationen_US
dc.subjectswitch array modulationen_US
dc.subjectswitched-capacitor DC-DC converteren_US
dc.titleA Fully Integrated Step-Down Switched-Capacitor DC-DC Converter With Dual Output Regulation Mechanismsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TCSII.2020.3008972en_US
dc.identifier.journalIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFSen_US
dc.citation.volume67en_US
dc.citation.issue9en_US
dc.citation.spage1649en_US
dc.citation.epage1653en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000567210300033en_US
dc.citation.woscount0en_US
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