完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChou, Tzu-Chiehen_US
dc.contributor.authorYang, Kai-Mingen_US
dc.contributor.authorLi, Jian-Chenen_US
dc.contributor.authorYu, Ting-Yangen_US
dc.contributor.authorYang, Yu-Taoen_US
dc.contributor.authorHu, Han-Wenen_US
dc.contributor.authorLiu, Yu-Weien_US
dc.contributor.authorKo, Cheng-Taen_US
dc.contributor.authorChen, Yu-Huaen_US
dc.contributor.authorTseng, Tzyy-Jangen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2020-10-05T02:01:56Z-
dc.date.available2020-10-05T02:01:56Z-
dc.date.issued2020-08-01en_US
dc.identifier.issn2156-3950en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TCPMT.2020.3004969en_US
dc.identifier.urihttp://hdl.handle.net/11536/155360-
dc.description.abstractWith the advantage of high surface-roughness tolerance, the pillar-concave Cu-Cu direct bonding without chemical-mechanical planarization (CMP) is investigated in detail, including the mechanism of thermal compensation, analysis of roughness, bonding strength, and bonding reliability. With the special design of Cu bond structure, excellent bonding results can be achieved under low thermal budget (150 degrees C for 1 min, atmosphere) with even high roughness of bonding surface. In addition, the pillar-concave scheme applied to fan-out panel-level package (FOPLP) has been demonstrated, showing the high feasibility of this scheme to realize applications in heterogeneous integration.en_US
dc.language.isoen_USen_US
dc.subject3-D integrationen_US
dc.subjectlow-temperature bondingen_US
dc.titleInvestigation of Pillar-Concave Structure for Low-Temperature Cu-Cu Direct Bonding in 3-D/2.5-D Heterogeneous Integrationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TCPMT.2020.3004969en_US
dc.identifier.journalIEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGYen_US
dc.citation.volume10en_US
dc.citation.issue8en_US
dc.citation.spage1296en_US
dc.citation.epage1303en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000567267600004en_US
dc.citation.woscount0en_US
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