標題: Transparent planar indium tin oxide for a thermo-photovoltaic selective emitter
作者: Chen, Yu-Bin
Parashar, Parag
Yang, Yi-Hua
Rawat, Tejender Singh
Chen, Shih-Wei
Shen, Chang-Hong
Chang, Da-Chiang
Shieh, Jia-Ming
Yu, Pei-Chen
Tseng, Tseung-Yuen
Lin, Albert S.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 1-Sep-2020
摘要: Designing an efficient emitter design is an important step for achieving a highly efficient TPV conversion process. Wavelength-selective emissivity, spectra match between the emitter and TPV cells, and high thermal stability are three main characteristics that must be considered before implementing the emitter. In this work, an indium tin oxide (ITO)/sapphire emitter structure is investigated for TPV application over the temperature range from 200 degrees C to 1000 degrees C. A 1-mu m-thick ITO layer is deposited on a 650-mu m-thick sapphire substrate. In addition, 50-nm-thick SiO2 is deposited on top of the ITO to enhance the performance of emitter at high temperatures. High-temperature emissivity and absorptivity measurement of the emitter samples are obtained using FTIR and a Hitachi U-4100 spectrophotometer, respectively. The resultant SiO2/ITO/sapphire/stainless-steel planar emitter structure has selective emission with high emissivity of similar to 0.8 in the 1-1.6 mu m wavelength regime at 1000 degrees C. This emission range lies at the bandgap edge of silicon TPV cells and thus can be used to harness the true potential for making a low-cost thermophotovoltaic system. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
URI: http://dx.doi.org/10.1364/OME.397246
http://hdl.handle.net/11536/155385
ISSN: 2159-3930
DOI: 10.1364/OME.397246
期刊: OPTICAL MATERIALS EXPRESS
Volume: 10
Issue: 9
起始頁: 2330
結束頁: 2344
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