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dc.contributor.authorYeh, Sheng-Shiuanen_US
dc.contributor.authorYu, Cheng-Yaen_US
dc.contributor.authorLee, Yi-Teen_US
dc.contributor.authorChiu, Shao-Pinen_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.date.accessioned2020-10-05T02:02:00Z-
dc.date.available2020-10-05T02:02:00Z-
dc.date.issued2020-08-18en_US
dc.identifier.issn2331-7019en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevApplied.14.024050en_US
dc.identifier.urihttp://hdl.handle.net/11536/155424-
dc.description.abstractThe present-day nanodevice dimensions continuously shrink, with the aim to prolong Moore's law. As downsizing meticulously persists, undesirable dynamic defects, which cause low-frequency noise and structural instability, play detrimental roles on limiting the ultimate performance and reliability of miniaturized devices. A good understanding and a meaningful control of the defect kinetics then become fundamental and urgent issues. Here we report observations of thermally activated atomic defect motion as well as nanocrystalline defect motion through electrical noise processes in metallic RuO2 rutile nanowires around room temperature. First, we extract the energy-distribution function and the number density of mobile atomic defects (oxygen vacancies). Second, we obtain the geometrical size, grain-boundary bonding strength, and relaxation times of dynamic nanocrystallites. Our results show clearly a powerful probe for effective and noninvasive characterizations of nanostructures and nanomaterials for which quantitative information about mechanical hardness, breakdown current density, and/or resistance noise is essential.en_US
dc.language.isoen_USen_US
dc.titleProbing Thermally Activated Atomic and Nanocrystalline Defect Motion Through Noise Processes in RuO2 Nanowiresen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevApplied.14.024050en_US
dc.identifier.journalPHYSICAL REVIEW APPLIEDen_US
dc.citation.volume14en_US
dc.citation.issue2en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000561848600003en_US
dc.citation.woscount0en_US
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