Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yeh, Sheng-Shiuan | en_US |
dc.contributor.author | Yu, Cheng-Ya | en_US |
dc.contributor.author | Lee, Yi-Te | en_US |
dc.contributor.author | Chiu, Shao-Pin | en_US |
dc.contributor.author | Lin, Juhn-Jong | en_US |
dc.date.accessioned | 2020-10-05T02:02:00Z | - |
dc.date.available | 2020-10-05T02:02:00Z | - |
dc.date.issued | 2020-08-18 | en_US |
dc.identifier.issn | 2331-7019 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevApplied.14.024050 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/155424 | - |
dc.description.abstract | The present-day nanodevice dimensions continuously shrink, with the aim to prolong Moore's law. As downsizing meticulously persists, undesirable dynamic defects, which cause low-frequency noise and structural instability, play detrimental roles on limiting the ultimate performance and reliability of miniaturized devices. A good understanding and a meaningful control of the defect kinetics then become fundamental and urgent issues. Here we report observations of thermally activated atomic defect motion as well as nanocrystalline defect motion through electrical noise processes in metallic RuO2 rutile nanowires around room temperature. First, we extract the energy-distribution function and the number density of mobile atomic defects (oxygen vacancies). Second, we obtain the geometrical size, grain-boundary bonding strength, and relaxation times of dynamic nanocrystallites. Our results show clearly a powerful probe for effective and noninvasive characterizations of nanostructures and nanomaterials for which quantitative information about mechanical hardness, breakdown current density, and/or resistance noise is essential. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Probing Thermally Activated Atomic and Nanocrystalline Defect Motion Through Noise Processes in RuO2 Nanowires | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1103/PhysRevApplied.14.024050 | en_US |
dc.identifier.journal | PHYSICAL REVIEW APPLIED | en_US |
dc.citation.volume | 14 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | 國際半導體學院 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.contributor.department | International College of Semiconductor Technology | en_US |
dc.identifier.wosnumber | WOS:000561848600003 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |