標題: Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs
作者: Shrestha, Niraj Man
Li, Yiming
Chen, Chao-Hsuan
Sanyal, Indraneel
Tarng, Jenn-Hawn
Chyi, Jen-Inn
Samukawa, Seiji
交大名義發表
電機工程學系
電信工程研究所
National Chiao Tung University
Department of Electrical and Computer Engineering
Institute of Communications Engineering
關鍵字: HEMTs;MODFETs;Gallium nitride;Logic gates;Lattices;Mathematical model;Aluminum nitride;AlInGaN;double barrier;gate recess;lattice matched;normally-off HEMT;mobility;power amplifier;resistance;threshold voltage;transconductance
公開日期: 1-Jan-2020
摘要: A novel lattice matched double barrier Al0.72In0.16Ga0.12N/Al0.18In0.04Ga0.78N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by solving a set of thermodynamic transport equations. Using the experimentally calibrated physical models with bearing mobility degradation by surface roughness in account, the recess gate and double barrier of the proposed device achieves a maximum drain current density (I-D,I-max) of 1149 mA/mm and a maximum transconductance (g(m,max)) of 358 mS/mm with a positive threshold voltage (Vth) of 0.2 V. The small polarization charge of first barrier is responsible for positive Vth. I-DS,I-max in the double barrier HEMT at high gate bias condition is due to injection of electrons from upper 2DEG which is almost impossible at lower gate voltage because of insufficient energy to cross the barrier. The injection of electrons is further supported by the second peak in the g(m) curve at low gate bias V-G = 1V. The outcome of this study suggests that the proposed device will be beneficial for high-frequency and high-power electronic applications.
URI: http://dx.doi.org/10.1109/JEDS.2020.3014252
http://hdl.handle.net/11536/155433
ISSN: 2168-6734
DOI: 10.1109/JEDS.2020.3014252
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 8
起始頁: 873
結束頁: 878
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