標題: High Output Power GaN-Based Green Resonant-Cavity Light-Emitting Diodes With Trapezoidal Quantum Wells
作者: Wu, Haocheng
Li, Heng
Kuo, Shiou-Yi
Chen, Bo-Yan
Lu, Tien-Chang
Huang, Huamao
光電工程學系
Department of Photonics
關鍵字: Radiative recombination;Light emitting diodes;Charge carrier processes;Cavity resonators;Indium;Power generation;GaN;green light-emitting diode (LED);resonant cavity light-emitting diode (RCLED);trapezoidal quantum wells (TQWs)
公開日期: 1-Sep-2020
摘要: Green resonant-cavity light-emitting diode (RCLED) has great potential in optical communication but suffers low efficiency. In this study, GaN-based flip-chip green RCLED incorporated with nitrogen face-oriented inclination asymmetric trapezoidal quantum wells (NOAT-QWs) is proposed to enhance the light-output power (LOP). Samples with NOAT-QWs and normal symmetric square quantum wells (SS-QWs) were fabricated and characterized. Although their electrical characteristics and emission spectra are similar, the LOP and emission efficiency are significantly improved. At a driving current of 450 mA, the improvement of LOP for RCLED with NOAT-QWs can be as high as 1.44 times in comparison to the sample with SS-QWs. The unprecedented high output power of 115 mW and the narrow full-width-at-half-maximum (FWHM) of 6.4 nm in the emission spectrum give great potential in optical communication. The inherent mechanism was investigated by the finite element analysis, from which the simulation results match well with the experimental measurements. The simulation results reveal that the NOAT-QWs are beneficial in alleviating the quantum confined stark effect and facilitating easier hole carriers' flow across the barriers, leading to more electron-hole wave function overlaps and higher radiative recombination rate.
URI: http://dx.doi.org/10.1109/TED.2020.3007595
http://hdl.handle.net/11536/155441
ISSN: 0018-9383
DOI: 10.1109/TED.2020.3007595
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 67
Issue: 9
起始頁: 3650
結束頁: 3654
Appears in Collections:Articles