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dc.contributor.authorChen, Sung-Wen Huangen_US
dc.contributor.authorHuang, Yu-Mingen_US
dc.contributor.authorChang, Yun-Hanen_US
dc.contributor.authorLin, Yueen_US
dc.contributor.authorLiou, Fang-Jyunen_US
dc.contributor.authorHsu, Yu-Chienen_US
dc.contributor.authorSong, Jieen_US
dc.contributor.authorChoi, Joowonen_US
dc.contributor.authorChow, Chi-Waien_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorHorng, Ray-Huaen_US
dc.contributor.authorChen, Zhongen_US
dc.contributor.authorHan, Jungen_US
dc.contributor.authorWu, Tingzhuen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2020-10-05T02:02:03Z-
dc.date.available2020-10-05T02:02:03Z-
dc.date.issued2020-08-19en_US
dc.identifier.issn2330-4022en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsphotonics.0c00764en_US
dc.identifier.urihttp://hdl.handle.net/11536/155463-
dc.description.abstractThe light-emitting diode (LED) is among promising candidates of light sources in visible light communication (VLC); however, strong internal polarization fields in common c-plane LEDs, especially green LEDs, result in low frequency and limited transmission performance. This study aims to overcome the limited 3-dB bandwidth of long-wavelength InGaN/GaN LEDs. Thus, semipolar (20-21) micro-LEDs (mu LEDs) were fabricated through several improved approaches on epitaxy and chip processes. The mu LED exhibits a 525 nm peak wavelength and good polarization performance. The highest 3-dB bandwidth up to 756 MHz and 1.5 Gbit/s data rate was achieved under a current density of 2.0 kA/cm(2). These results suggest a good transmission capacity of green semipolar (20-21) mu LEDs in VLC applications.en_US
dc.language.isoen_USen_US
dc.subjectsemipolar GaNen_US
dc.subjectmicro light-emitting diodeen_US
dc.subjectvisible light communicationen_US
dc.subjecthigh bandwidthen_US
dc.titleHigh-Bandwidth Green Semipolar (20-21) InGaN/GaN Micro Light-Emitting Diodes for Visible Light Communicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsphotonics.0c00764en_US
dc.identifier.journalACS PHOTONICSen_US
dc.citation.volume7en_US
dc.citation.issue8en_US
dc.citation.spage2228en_US
dc.citation.epage2235en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000563072500042en_US
dc.citation.woscount0en_US
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