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dc.contributor.authorBorland, Johnen_US
dc.contributor.authorChaung, Shang-Shiunen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorJoshi, Abhijeeten_US
dc.contributor.authorBasol, Bulenten_US
dc.contributor.authorKuroi, Takashien_US
dc.contributor.authorGoodman, Garyen_US
dc.contributor.authorKhapochkima, Nadyaen_US
dc.contributor.authorBuyuklimanli, Temelen_US
dc.date.accessioned2020-10-05T02:02:20Z-
dc.date.available2020-10-05T02:02:20Z-
dc.date.issued2018-01-01en_US
dc.identifier.isbn978-1-5386-6828-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/155495-
dc.description.abstractWe investigated the effects of Sn, Si and cluster-C implantation into both P-well and N-well doped regions of 100nm Ge-epilayer on Si wafers after RTA annealing. For the P-well case a 7.3x increase in Hall bulk mobility to 3384cm(2)/Vs with cluster-C implant and for the N-well case a 4.6x increase in Hall bulk mobility to 2062cm(2)/Vs with Sn implant. Measuring layer mobility depth profiles shows mobility in the top 10-20nm of the surface can be up to 6000cm(2)/Vs for N-well with Sn implant and >10,000cm(2)/Vs for P-well with Sn implant.en_US
dc.language.isoen_USen_US
dc.subjectGe-epien_US
dc.subjectbulk mobilityen_US
dc.subjectlayer mobilityen_US
dc.subjectdifferential Hall effect microscopyen_US
dc.titleBoosting Ge-epi N-well Mobility with Sn Implantation and P-well Mobility with Cluster-C Implantationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018)en_US
dc.citation.spage101en_US
dc.citation.epage105en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000561708500022en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper