Title: | Optical Simulation and Fabrication of Near-Ultraviolet LEDs on a Roughened Backside GaN Substrate |
Authors: | Fu, Yi-Keng Lu, Yu-Hsuan Xuan, Rong Chao, Chia-Hsin Su, Yan-Kuin Chen, Jenn-Fang 電子物理學系 Department of Electrophysics |
Keywords: | Chemical wet-etching;GaN;light extraction;near-ultraviolet light-emitting diode (NUV LED);simulation |
Issue Date: | 15-Mar-2012 |
Abstract: | In this letter, the numerical and experimental demonstrations for enhancement of light extraction efficiency in near-ultraviolet light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate through a chemical wet-etching process are investigated. It was also found that the increased etching time can increase the height of hexagonal pyramids and decrease the density of hexagonal pyramids. With 20-mA injection current, it was found that forward voltages were 3.13 and 3.16 V while output powers were 13.15 and 27.18 mW for the conventional LED and roughened backside LED, respectively. |
URI: | http://dx.doi.org/10.1109/LPT.2011.2182606 http://hdl.handle.net/11536/15550 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2011.2182606 |
Journal: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 24 |
Issue: | 6 |
Begin Page: | 488 |
End Page: | 490 |
Appears in Collections: | Articles |
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