標題: | Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films |
作者: | Wu, Chih-Yuan Lin, Bo-Tsung Zhang, Yu-Jie Li, Zhi-Qing Lin, Juhn-Jong 電子物理學系 物理研究所 Department of Electrophysics Institute of Physics |
公開日期: | 5-三月-2012 |
摘要: | The electron dephasing processes in two-dimensional homogeneous and inhomogeneous indium tin oxide thin films have been investigated in a wide temperature range 0.3-90 K. We found that the small-energy-transfer electron-electron (e-e) scattering process dominated the dephasing from a few kelvins to several tens of kelvins. At higher temperatures, a crossover to the large-energy-transfer e-e scattering process was observed. Below about 1 to 2 K, the dephasing time tau(phi) revealed a very weak temperature dependence, which intriguingly scaled approximately with the inverse of the electron diffusion constant D, i.e., tau(phi)(T approximate to 0.3 K) proportional to 1/D. Theoretical implications of our results are discussed. The reason why the electron-phonon relaxation rate is negligibly weak in this low-carrier-concentration material is presented. |
URI: | http://dx.doi.org/10.1103/PhysRevB.85.104204 http://hdl.handle.net/11536/15557 |
ISSN: | 1098-0121 |
DOI: | 10.1103/PhysRevB.85.104204 |
期刊: | PHYSICAL REVIEW B |
Volume: | 85 |
Issue: | 10 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |