標題: | Diode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protection |
作者: | Chen, Wen-Yi Rosenbaum, Elyse Ker, Ming-Dou 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Charge device model (CDM);electrostatic discharge (ESD);silicon-controlled rectifier (SCR) |
公開日期: | 1-三月-2012 |
摘要: | Diode-triggered silicon-controlled rectifiers(DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e. g., high speed or low power. |
URI: | http://dx.doi.org/10.1109/TDMR.2011.2171487 http://hdl.handle.net/11536/15573 |
ISSN: | 1530-4388 |
DOI: | 10.1109/TDMR.2011.2171487 |
期刊: | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY |
Volume: | 12 |
Issue: | 1 |
起始頁: | 10 |
結束頁: | 14 |
顯示於類別: | 期刊論文 |