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dc.contributor.authorChen, Wen-Yien_US
dc.contributor.authorRosenbaum, Elyseen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2014-12-08T15:21:52Z-
dc.date.available2014-12-08T15:21:52Z-
dc.date.issued2012-03-01en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TDMR.2011.2171487en_US
dc.identifier.urihttp://hdl.handle.net/11536/15573-
dc.description.abstractDiode-triggered silicon-controlled rectifiers(DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e. g., high speed or low power.en_US
dc.language.isoen_USen_US
dc.subjectCharge device model (CDM)en_US
dc.subjectelectrostatic discharge (ESD)en_US
dc.subjectsilicon-controlled rectifier (SCR)en_US
dc.titleDiode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protectionen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TDMR.2011.2171487en_US
dc.identifier.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITYen_US
dc.citation.volume12en_US
dc.citation.issue1en_US
dc.citation.spage10en_US
dc.citation.epage14en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000301236700002-
dc.citation.woscount3-
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