标题: | Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation |
作者: | Lo, Wen-hung Chang, Ting-Chang Dai, Chih-Hao Chung, Wan-Lin Chen, Ching-En Ho, Szu-Han Cheng, Osbert Huang, Cheng Tung 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | Gate-induced floating-body effect (GIFBE);negative bias temperature instability (NBTI);silicon-on-insulator (SOI) MOSFETs;strained silicon |
公开日期: | 1-三月-2012 |
摘要: | This letter investigates the impact of mechanical strain on gate-induced floating-body effect in partially depleted silicon-on-insulator p-channel metal-oxide-semiconductor field-effect transistors. The strained FB device has less NBTI degradation than unstrained devices. This behavior can be attributed to the fact that more electron accumulation induced by strain effect reduces the electric oxide field significantly during NBTI stress. Analysis of the body current (I-B) under source/drain grounded and floating operation indicates an increase in the anode electron injection and electron tunneling from conduction band which occur at the partial n(+) poly-Si gate and Si substrate, respectively. This phenomenon can be attributed to the bandgap narrowing which has been induced by the strain effect. |
URI: | http://dx.doi.org/10.1109/LED.2011.2177956 http://hdl.handle.net/11536/15592 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2011.2177956 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 33 |
Issue: | 3 |
起始页: | 303 |
结束页: | 305 |
显示于类别: | Articles |
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