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dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorChou, Lu-Shengen_US
dc.contributor.authorChiu, Hao-Linen_US
dc.contributor.authorChen, Bo-Chengen_US
dc.date.accessioned2014-12-08T15:21:54Z-
dc.date.available2014-12-08T15:21:54Z-
dc.date.issued2012-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2011.2179282en_US
dc.identifier.urihttp://hdl.handle.net/11536/15595-
dc.description.abstractIn addition to the gate electrode at the bottom, a dual-gate amorphous InGaZnO4 thin-film transistor (TFT) has a secondary gate electrode on the top. The threshold voltage (Vth) of the TFT using the bottom gate in its normal operation can be controlled by the top gate. Based on this phenomenon, a simple circuit of active-matrix organic light-emitting diode using the top gate to compensate threshold voltage variation is proposed. This new pixel circuit uses only three TFTs and two capacitors. The validity of Vth compensation is verified experimentally.en_US
dc.language.isoen_USen_US
dc.subjectActive-matrix organic light-emitting diode (AMOLED)en_US
dc.subjectdual-gate amorphous InGaZnO4 (a-IGZO) thin-film transistor (TFT)en_US
dc.subjectthreshold voltage (Vth) compensation circuiten_US
dc.titleThree-Transistor AMOLED Pixel Circuit With Threshold Voltage Compensation Function Using Dual-Gate IGZO TFTen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2011.2179282en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume33en_US
dc.citation.issue3en_US
dc.citation.spage393en_US
dc.citation.epage395en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000300580000031-
dc.citation.woscount5-
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