Boosted Gain of the Differential Amplifier Using the Second Gate of the Dual-Gate a-IGZO TFTs

Title:	Boosted Gain of the Differential Amplifier Using the Second Gate of the Dual-Gate a-IGZO TFTs
Authors:	Tai, Y. -H. Chiu, H. -L. Chou, L. -S. Chang, C. -H. 光電工程學系顯示科技研究所 Department of Photonics Institute of Display
Keywords:	Differential amplifier circuit;dual-gate amorphous InGaZnO4 (a-IGZO) thin-film transistor (TFT)
Issue Date:	1-Dec-2012
Abstract:	A dual-gate amorphous InGaZnO4 (a-IGZO) thin-film transistor (TFT) has two gate electrodes. The primary gate electrode is at the bottom, and the other is on the top. The drain current of the TFT can be controlled by both the bottom and top gates. This phenomenon provides great flexibility for the circuit design. In this letter, we propose the differential amplifier circuit using the top gate of the dual-gate a-IGZO TFT as an input for positive feedback to boost the gain. It is experimentally verified that the gain of the differential amplifier circuit is increased three times larger than those without the feedback loop.
URI:	http://dx.doi.org/10.1109/LED.2012.2220955 http://hdl.handle.net/11536/20590
ISSN:	0741-3106
DOI:	10.1109/LED.2012.2220955
Journal:	IEEE ELECTRON DEVICE LETTERS
Volume:	33
Issue:	12
Begin Page:	1729
End Page:	1731
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

APA	Tai, Y. -H., Chiu, H. -L., Chou, L. -S., & Chang, C. -H. (2012). Boosted Gain of the Differential Amplifier Using the Second Gate of the Dual-Gate a-IGZO TFTs. WOS:000311808300019.
Bibtex	@article{Tai2012Boosted, title={Boosted Gain of the Differential Amplifier Using the Second Gate of the Dual-Gate a-IGZO TFTs}, author={Tai, Y. -H. and Chiu, H. -L. and Chou, L. -S. and Chang, C. -H.}, journal={WOS:000311808300019}, year={2012}, url={https://ir.lib.nycu.edu.tw/handle/11536/20590}, }