Boosted Gain of the Differential Amplifier Using the Second Gate of the Dual-Gate a-IGZO TFTs

标题:	Boosted Gain of the Differential Amplifier Using the Second Gate of the Dual-Gate a-IGZO TFTs
作者:	Tai, Y. -H. Chiu, H. -L. Chou, L. -S. Chang, C. -H. 光电工程学系显示科技研究所 Department of Photonics Institute of Display
关键字:	Differential amplifier circuit;dual-gate amorphous InGaZnO4 (a-IGZO) thin-film transistor (TFT)
公开日期:	1-十二月-2012
摘要:	A dual-gate amorphous InGaZnO4 (a-IGZO) thin-film transistor (TFT) has two gate electrodes. The primary gate electrode is at the bottom, and the other is on the top. The drain current of the TFT can be controlled by both the bottom and top gates. This phenomenon provides great flexibility for the circuit design. In this letter, we propose the differential amplifier circuit using the top gate of the dual-gate a-IGZO TFT as an input for positive feedback to boost the gain. It is experimentally verified that the gain of the differential amplifier circuit is increased three times larger than those without the feedback loop.
URI:	http://dx.doi.org/10.1109/LED.2012.2220955 http://hdl.handle.net/11536/20590
ISSN:	0741-3106
DOI:	10.1109/LED.2012.2220955
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	33
Issue:	12
起始页:	1729
结束页:	1731
显示于类别：	Articles

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APA	Tai, Y. -H., Chiu, H. -L., Chou, L. -S., & Chang, C. -H. (2012). Boosted Gain of the Differential Amplifier Using the Second Gate of the Dual-Gate a-IGZO TFTs. WOS:000311808300019.
Bibtex	@article{Tai2012Boosted, title={Boosted Gain of the Differential Amplifier Using the Second Gate of the Dual-Gate a-IGZO TFTs}, author={Tai, Y. -H. and Chiu, H. -L. and Chou, L. -S. and Chang, C. -H.}, journal={WOS:000311808300019}, year={2012}, url={https://ir.lib.nycu.edu.tw/handle/11536/20590?locale=zh_CN}, }