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dc.contributor.authorTai, Y. -H.en_US
dc.contributor.authorChiu, H. -L.en_US
dc.contributor.authorChou, L. -S.en_US
dc.contributor.authorChang, C. -H.en_US
dc.date.accessioned2014-12-08T15:28:28Z-
dc.date.available2014-12-08T15:28:28Z-
dc.date.issued2012-12-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2012.2220955en_US
dc.identifier.urihttp://hdl.handle.net/11536/20590-
dc.description.abstractA dual-gate amorphous InGaZnO4 (a-IGZO) thin-film transistor (TFT) has two gate electrodes. The primary gate electrode is at the bottom, and the other is on the top. The drain current of the TFT can be controlled by both the bottom and top gates. This phenomenon provides great flexibility for the circuit design. In this letter, we propose the differential amplifier circuit using the top gate of the dual-gate a-IGZO TFT as an input for positive feedback to boost the gain. It is experimentally verified that the gain of the differential amplifier circuit is increased three times larger than those without the feedback loop.en_US
dc.language.isoen_USen_US
dc.subjectDifferential amplifier circuiten_US
dc.subjectdual-gate amorphous InGaZnO4 (a-IGZO) thin-film transistor (TFT)en_US
dc.titleBoosted Gain of the Differential Amplifier Using the Second Gate of the Dual-Gate a-IGZO TFTsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2012.2220955en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume33en_US
dc.citation.issue12en_US
dc.citation.spage1729en_US
dc.citation.epage1731en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000311808300019-
dc.citation.woscount2-
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