Three-Transistor AMOLED Pixel Circuit With Threshold Voltage Compensation Function Using Dual-Gate IGZO TFT

Title:	Three-Transistor AMOLED Pixel Circuit With Threshold Voltage Compensation Function Using Dual-Gate IGZO TFT
Authors:	Tai, Ya-Hsiang Chou, Lu-Sheng Chiu, Hao-Lin Chen, Bo-Cheng 光電工程學系顯示科技研究所 Department of Photonics Institute of Display
Keywords:	Active-matrix organic light-emitting diode (AMOLED);dual-gate amorphous InGaZnO4 (a-IGZO) thin-film transistor (TFT);threshold voltage (Vth) compensation circuit
Issue Date:	1-Mar-2012
Abstract:	In addition to the gate electrode at the bottom, a dual-gate amorphous InGaZnO4 thin-film transistor (TFT) has a secondary gate electrode on the top. The threshold voltage (Vth) of the TFT using the bottom gate in its normal operation can be controlled by the top gate. Based on this phenomenon, a simple circuit of active-matrix organic light-emitting diode using the top gate to compensate threshold voltage variation is proposed. This new pixel circuit uses only three TFTs and two capacitors. The validity of Vth compensation is verified experimentally.
URI:	http://dx.doi.org/10.1109/LED.2011.2179282 http://hdl.handle.net/11536/15595
ISSN:	0741-3106
DOI:	10.1109/LED.2011.2179282
Journal:	IEEE ELECTRON DEVICE LETTERS
Volume:	33
Issue:	3
Begin Page:	393
End Page:	395
Appears in Collections:	Articles

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