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dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorTsai, Wu-Weien_US
dc.contributor.authorLo, Yen-renen_US
dc.contributor.authorWu, Yu-Meien_US
dc.contributor.authorYang, Yuh-Shyongen_US
dc.date.accessioned2014-12-08T15:21:55Z-
dc.date.available2014-12-08T15:21:55Z-
dc.date.issued2012-03-01en_US
dc.identifier.issn1530-437Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSEN.2011.2121901en_US
dc.identifier.urihttp://hdl.handle.net/11536/15612-
dc.description.abstractNon-invasive ammonia sensors are attractive alternatives for the diagnoses of a variety of chronic diseases such as liver cirrhosis and renal failure. A low cost pentacene-based organic thin film transistor (OTFT) fabricated by a novel and simple process was demonstrated to be highly sensitive and specific for ammonia gas. Various measurement parameters that reflected OTFT device characteristics for ammonia detection were investigated. Significant variations of the turn-on current, intrinsic mobility, and threshold voltage (V-th) were observed while subthreshold swing (S.S.) was almost unchanged to the alteration of ammonia concentration. The OTFT device detected 0.5 similar to 5 ppm concentration ammonia gas at room temperature, which is in the critical range that can distinguish between healthy person and paticents with liver cirrhosis and renal failure. The sensitivity of the device was further enhanced following a simple UV irradiation treatment to modify the functional groups on poly(methyl methacrylate) (PMMA) dielectric layer. Possible interference for ammonia detection such as humidity effect and selectivity among nitrogen, alcohol, carbon dioxide, acetone, methane and ammonia were also examined. We concluded that the proposed pentacene-based OTFT is a promising device for the future application in non-invasive medical diagnoses.en_US
dc.language.isoen_USen_US
dc.subjectAmmonia sensoren_US
dc.subjectnon-invasiveen_US
dc.subjectOTFTen_US
dc.subjectpentaceneen_US
dc.titlePentacene-Based Organic Thin Film Transistors for Ammonia Sensingen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSEN.2011.2121901en_US
dc.identifier.journalIEEE SENSORS JOURNALen_US
dc.citation.volume12en_US
dc.citation.issue3en_US
dc.citation.spage594en_US
dc.citation.epage601en_US
dc.contributor.department生物科技學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Biological Science and Technologyen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000300185000024-
dc.citation.woscount12-
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