完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLu, Tsan-Wenen_US
dc.contributor.authorLin, Pin-Tsoen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.date.accessioned2014-12-08T15:22:01Z-
dc.date.available2014-12-08T15:22:01Z-
dc.date.issued2012-02-15en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.37.000569en_US
dc.identifier.urihttp://hdl.handle.net/11536/15634-
dc.description.abstractWe theoretically propose and investigate a TM-polarized one-dimensional photonic crystal nanocavity with a horizontal SiO2 slot on a suspended silicon nanobeam via the three-dimensional finite-element method. The ultrahigh quality factor and ultrasmall effective mode volume of 1.5 x 10(7) and 0.176 half-wavelength cubic of the horizontally SiO2-slotted nanocavity show strong possibilities for realizing an erbium-doped SiO2 nanolaser. This horizontal SiO2 slot structure can be precisely formed via the sputtering process and further transformed into an air slot via selective wet etching for optical index and biomolecule sensing. (C) 2012 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titlePhotonic crystal horizontally slotted nanobeam cavity for silicon-based nanolasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OL.37.000569en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.citation.volume37en_US
dc.citation.issue4en_US
dc.citation.spage569en_US
dc.citation.epage571en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000300706500042-
dc.citation.woscount12-
顯示於類別:期刊論文


文件中的檔案:

  1. 000300706500042.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。