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dc.contributor.authorLin, Yan-Chengen_US
dc.contributor.authorJiang, Wei-Shien_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorChen, Wei-Kuoen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorChia, Chin-Hauen_US
dc.contributor.authorChen, Cheng-Yuen_US
dc.contributor.authorChyi, Jen-Innen_US
dc.date.accessioned2014-12-08T15:22:01Z-
dc.date.available2014-12-08T15:22:01Z-
dc.date.issued2012-02-13en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3687187en_US
dc.identifier.urihttp://hdl.handle.net/11536/15637-
dc.description.abstractThis study investigates the temperature-dependent decay dynamics in highly mismatched ZnSe0.950Te0.050 alloy using photoluminescence (PL) and time-resolved PL spectroscopy. The PL peak energy exhibits a V-shaped dependence on temperature (10-300 K), indicating strong carrier localization. Kohlrausch's stretched exponential law, in which the deduced stretching exponent beta is highly consistent with the V-shaped PL peak shift, closely corresponds to the complex decay curves over a wide temperature range. Additionally, the PL lifetime tau initially increases and then monotonically declines as the temperature increases. These findings agree excellently with the low electron-hole binding energy upon thermal ionization of weakly bound electrons. (C) 2012 American Institute of Physics. [doi:10.1063/1.3687187]en_US
dc.language.isoen_USen_US
dc.titleTemperature-dependent decay dynamics in highly mismatched ZnSe1-xTex alloyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3687187en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume100en_US
dc.citation.issue7en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000300436800029-
dc.citation.woscount2-
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