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dc.contributor.authorHsiao, Yu-Linen_US
dc.contributor.authorLu, Lung-Chien_US
dc.contributor.authorWu, Chia-Hsunen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorKuo, Chien-Ien_US
dc.contributor.authorMaa, Jer-Shenen_US
dc.contributor.authorLin, Kung-Liangen_US
dc.contributor.authorLuong, Tien-Tungen_US
dc.contributor.authorHuang, Wei-Chingen_US
dc.contributor.authorChang, Chia-Huaen_US
dc.contributor.authorDee, Chang Fuen_US
dc.contributor.authorMajlis, Burhanuddin Yeopen_US
dc.date.accessioned2014-12-08T15:22:03Z-
dc.date.available2014-12-08T15:22:03Z-
dc.date.issued2012-02-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.51.025505en_US
dc.identifier.urihttp://hdl.handle.net/11536/15652-
dc.description.abstract2.2-mu m-thick crack-free GaN films were grown on patterned Si substrates. The crack-free GaN films were obtained by patterning Si substrate and optimizing the graded AlxGa1-xN layers. With the increase of the graded AlxGa1-xN layer thickness, the GaN crystal quality improved as judged from the X-ray diffraction data. By applying multi-AlxGa1-xN layers on the patterned Si substrate, a 31% reduction of tensile stress for the GaN film was obtained as measured by micro-Raman. For the AlGaN/GaN high electron mobility transistor grown on 1 x 1 cm(2) larger patterns, the device exhibits maximum drain current density of 776 mA/mm and maximum transconductance of 101 mS/mm. (c) 2012 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleEffect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.51.025505en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume51en_US
dc.citation.issue2en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department半導體材料與製程設備組zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDegree Program of Semiconductor Material and Process Equipmenten_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000300627200056-
dc.citation.woscount3-
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