標題: | Growth and properties of single-crystalline Ge nanowires and germanide/Ge nano-heterostructures |
作者: | Tsai, Cheng-Yu Yu, Shih-Ying Hsin, Cheng-Lun Huang, Chun-Wei Wang, Chun-Wen Wu, Wen-Wei 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2012 |
摘要: | Single-crystalline Ge nanowires have been synthesized on Au-coated Si substrates through a thermal evaporation, condensation method and vapor-liquid-solidmechanism. The [111] growth direction of the Ge nanowires was analyzed using HRTEM and fast Fourier transform diffraction patterns. Global back-gated Ge nanowire field-effect transistors (FETs) on the Si3N4 dielectrics were fabricated and studied, showing p-type behavior and a field effect hole mobility of 44.3 cm(2) V-1 s(-1). The Ge channel length could be well controlled through the annealing process. After a rapid thermal annealing (RTA) process, Ni2Ge/Ge/Ni2Ge nano-heterostructures were formed. The electrical transport properties were effectively improved by the heterojunction rather than the metal contact. The epitaxial relationship between Ge and orthorhombic Ni2Ge was Ge [110]//Ni2Ge[110] and Ge(-11-1)//Ni2Ge(1-1-2). From electrical transport properties, the measured resistivity of the Ge nanowires was much lower than intrinsic bulk Ge material. A room temperature photoluminescence spectrum of the Ge nanowires possessed a broad blue emission with a peak at 462 nm in wavelength, which was attributed to the oxide-related defect states. Due to the existence of the defects, a Ge nanowire FET was able to detect visible light and serve as a nanowire photodetector. |
URI: | http://hdl.handle.net/11536/15714 http://dx.doi.org/10.1039/c1ce06107k |
ISSN: | 1466-8033 |
DOI: | 10.1039/c1ce06107k |
期刊: | CRYSTENGCOMM |
Volume: | 14 |
Issue: | 1 |
起始頁: | 53 |
結束頁: | 58 |
Appears in Collections: | Articles |
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