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dc.contributor.authorLin, Jun-Shuwen_US
dc.date.accessioned2014-12-08T15:22:14Z-
dc.date.available2014-12-08T15:22:14Z-
dc.date.issued2012-06-15en_US
dc.identifier.issn0957-4174en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.eswa.2011.09.146en_US
dc.identifier.urihttp://hdl.handle.net/11536/15752-
dc.description.abstractAccording to previous studies, the Poisson model and negative binomial model could not accurately estimate the wafer yield. Numerous mathematical models proposed in past years were very complicated. Furthermore, other neural networks models can not provide a certain equation for managers to use. Thus, a novel design of this paper is to construct a new wafer yield model with a handy polynomial by using group method of data handling (GMDH). In addition to defect cluster index (CIM), 12 critical electrical test parameters are also considered simultaneously. Because the number of input variables for GMDH is inadvisable to be too many, principal component analysis (PCA) is used to reduce the dimensions of 12 critical electrical test parameters to a manageable few without much loss of information. The proposed approach is validated by a case obtained in a DRAM company in Taiwan. (C) 2011 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectYield modelen_US
dc.subjectDefect cluster indexen_US
dc.subjectGroup method of data handling (GMDH)en_US
dc.subjectPrincipal component analysis (PCA)en_US
dc.titleA novel design of wafer yield model for semiconductor using a GMDH polynomial and principal component analysisen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.eswa.2011.09.146en_US
dc.identifier.journalEXPERT SYSTEMS WITH APPLICATIONSen_US
dc.citation.volume39en_US
dc.citation.issue8en_US
dc.citation.spage6665en_US
dc.citation.epage6671en_US
dc.contributor.department工業工程與管理學系zh_TW
dc.contributor.departmentDepartment of Industrial Engineering and Managementen_US
dc.identifier.wosnumberWOS:000302032600001-
dc.citation.woscount0-
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