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dc.contributor.authorMeena, Jagan Singhen_US
dc.contributor.authorChu, Min-Chingen_US
dc.contributor.authorWu, Chung-Shuen_US
dc.contributor.authorLiang, Jie-Chianen_US
dc.contributor.authorChang, Yu-Chengen_US
dc.contributor.authorRavipati, Srikanthen_US
dc.contributor.authorChang, Feng-Chihen_US
dc.contributor.authorKo, Fu-Hsiangen_US
dc.date.accessioned2014-12-08T15:22:15Z-
dc.date.available2014-12-08T15:22:15Z-
dc.date.issued2012-05-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2012.01.007en_US
dc.identifier.urihttp://hdl.handle.net/11536/15758-
dc.description.abstractTriblock copolymer surfactant, HO(CH2CH2O)(20)(CH2CH(CH3)O)(70)(CH2CH2O)(20)H (i.e. P123)-based nanocrystalline (nc)-TiO2 thin film had been synthesized on organic flexible polyimide (PI) sheet for their application in organic metal-insulator-semiconductor (MIS) device. The nc-TiO2 film over PI was successfully deposited for the first time by a systematic solution proceeds dip-coating method and by the assistance of triblock copolymer surfactant. The effect of annealing temperature (270 degrees C, 5 h) on the texture, morphology and time-induced hydrophilicity was studied by X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and contact angle system, respectively, to examine the chemical composition of the film and the contact angle. The surface morphology of the semiconducting layer of organic pentacene was also investigated by using AFM and XRD, and confirmed that continuous crystalline film growth had occurred on the nc-TiO2 surface over flexible PI sheet. The semiconductor-dielectric interface of pentacene and nc-TiO2 films was characterized by current-voltage and capacitance-voltage measurements. This interface measurement in cross-link MIS structured device yielded a low leakage current density of 8.7 x 10(-12) A cm(-2) at 0 to -5V, maximum capacitance of 102.3 pF at 1 MHz and estimated dielectric constant value of 28.8. Furthermore, assessment of quality study of nc-TiO2 film in real-life flexibility tests for different types of bending settings with high durability (c. a. 30 days) demonstrated a better comprehension of dielectric properties over flexible PI sheet. We expected them to have a keen interest in the scientific study, which could be an alternate opportunity to the excellent dielectric-semiconductor interface at economic and low temperature processing for large-area flexible field-effect transistors and sensors. (C) 2012 Elsevier B. V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectFlexible electronicsen_US
dc.subjectDip-coatingen_US
dc.subjectTitanium-dioxideen_US
dc.subjectPentaceneen_US
dc.subjectMetal-insulator-semiconductoren_US
dc.titleFacile synthetic route to implement a fully bendable organic metal-insulator-semiconductor device on polyimide sheeten_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2012.01.007en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume13en_US
dc.citation.issue5en_US
dc.citation.spage721en_US
dc.citation.epage732en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000302121900002-
dc.citation.woscount4-
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