Current Spreading Improvement in GaN-Based Light-Emitting Diode Grown on Nano-Rod GaN Template

doi:10.1109/LPT.2012.2185043

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Kuo, Cheng-Huang	en_US
dc.contributor.author	Chang, Li-Chuan	en_US
dc.contributor.author	Chou, Hsiu-Mei	en_US
dc.date.accessioned	2014-12-08T15:22:16Z	-
dc.date.available	2014-12-08T15:22:16Z	-
dc.date.issued	2012-04-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2012.2185043	en_US
dc.identifier.uri	http://hdl.handle.net/11536/15770	-
dc.description.abstract	In this letter, we demonstrate GaN-based light-emitting diodes (LEDs) with high-quality heavily-Si-doped n-GaN prepared on a nano-rod GaN (NR-GaN) template. With 20-mA current injection, it was found that light output power (LOP) can be enhanced 29.0%, as compared to the conventional LED. Enhancement of the LOP can be attributed to the improvement of the current spreading and the increase of light extraction efficiency by using the heavily-Si-doped n-GaN prepared on the NR-GaN template.	en_US
dc.language.iso	en_US	en_US
dc.subject	Current spreading	en_US
dc.subject	InGaN/GaN	en_US
dc.subject	light-emitting diode (LED)	en_US
dc.subject	nano	en_US
dc.title	Current Spreading Improvement in GaN-Based Light-Emitting Diode Grown on Nano-Rod GaN Template	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LPT.2012.2185043	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	24	en_US
dc.citation.issue	7	en_US
dc.citation.spage	608	en_US
dc.citation.epage	610	en_US
dc.contributor.department	照明與能源光電研究所	zh_TW
dc.contributor.department	Institute of Lighting and Energy Photonics	en_US
dc.identifier.wosnumber	WOS:000302085900007	-
dc.citation.woscount	2	-
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