n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection

doi:10.1364/OL.37.001112

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tasi, D. S.	en_US
dc.contributor.author	Kang, C. F.	en_US
dc.contributor.author	Wang, H. H.	en_US
dc.contributor.author	Lin, C. A.	en_US
dc.contributor.author	Ke, J. J.	en_US
dc.contributor.author	Chu, Y. H.	en_US
dc.contributor.author	He, J. H.	en_US
dc.date.accessioned	2014-12-08T15:22:19Z	-
dc.date.available	2014-12-08T15:22:19Z	-
dc.date.issued	2012-03-15	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OL.37.001112	en_US
dc.identifier.uri	http://hdl.handle.net/11536/15801	-
dc.description.abstract	A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO3 (LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO/LAO/p-Si PDs due to the high potential barrier between LAO and p-Si layers (similar to 2.0 eV). These results support the use of n-ZnO/LAO/p-Si PDs in the visible-blind UV PDs in a visible-light environment. (C) 2012 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OL.37.001112	en_US
dc.identifier.journal	OPTICS LETTERS	en_US
dc.citation.volume	37	en_US
dc.citation.issue	6	en_US
dc.citation.spage	1112	en_US
dc.citation.epage	1114	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000302212200043	-
dc.citation.woscount	4	-
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