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dc.contributor.authorYang, S.en_US
dc.contributor.authorKuo, C. C.en_US
dc.contributor.authorLiu, W. -R.en_US
dc.contributor.authorLin, B. H.en_US
dc.contributor.authorHsu, H. -C.en_US
dc.contributor.authorHsu, C. -H.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.date.accessioned2014-12-08T15:22:20Z-
dc.date.available2014-12-08T15:22:20Z-
dc.date.issued2012-03-05en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3692730en_US
dc.identifier.urihttp://hdl.handle.net/11536/15806-
dc.description.abstractBasal plane stacking faults (BSFs) with density of similar to 1 x 10(6) cm(-1) are identified as the dominant defect in the annealed ZnO thin films grown on c-plane sapphire by atomic layer deposition. The dominant peak centered at 3.321 eV in low-temperature photoluminescence measurements is attributed to the emission from the BSFs. The emission mechanism is considered to be the confined indirect excitons in the region of quantum-well-like structure formed by the BSFs. The observed energy shift of 19 meV with respect to the BSF-bounded exciton at low temperature may be caused by the localization effect associated with the coupling between BSF quantum wells. (C) 2012 American Institute of Physics. [http://dx.doi. org/10.1063/1.3692730]en_US
dc.language.isoen_USen_US
dc.titlePhotoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3692730en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume100en_US
dc.citation.issue10en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000301655500023-
dc.citation.woscount11-
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