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dc.contributor.authorHuang, Yu-Jenen_US
dc.contributor.authorTsai, Min-Chuanen_US
dc.contributor.authorWang, Chiung-Hsinen_US
dc.contributor.authorHsieh, Tsung-Eongen_US
dc.date.accessioned2014-12-08T15:22:22Z-
dc.date.available2014-12-08T15:22:22Z-
dc.date.issued2012-02-29en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2011.12.014en_US
dc.identifier.urihttp://hdl.handle.net/11536/15837-
dc.description.abstractPhase-transition temperature of GeSbTe (GST) chalcogenide film was drastically increased from 159 to 236 degrees C by cerium (Ce) doping (up to 8.6 at.%) without altering the resistivity property of GST. Grain refinement via the solid-solution mechanism and the amplification of p-type semiconducting behavior in Ce-doped GST were observed. They were correlated with the enhancement of thermal stability and data retention property of GST as revealed by exothermal and isothermal analyses. Phase-change memory (PCM) device characterized at various temperatures revealed an effective thermal stability improvement on the threshold voltage of PCM device by Ce doping. (c) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectPhase-change memoryen_US
dc.subjectGermanium antimony tellurideen_US
dc.subjectCeriumen_US
dc.subjectDopingen_US
dc.subjectElectrical propertiesen_US
dc.titleCharacterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2011.12.014en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume520en_US
dc.citation.issue9en_US
dc.citation.spage3692en_US
dc.citation.epage3696en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000301627100048-
dc.citation.woscount5-
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