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dc.contributor.authorWu, Chun-Huien_US
dc.contributor.authorLin, Shun-Huaen_US
dc.contributor.authorChiueh, Hermingen_US
dc.date.accessioned2014-12-08T15:02:59Z-
dc.date.available2014-12-08T15:02:59Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-3365-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/1586-
dc.description.abstractThe method of "Logical Effort Delay Model" allows designers to quickly estimate delay time and optimize logic paths. But the previous variances of logical effort models do not mention how to handle process, voltage, and temperature (PVT) variations appropriately, which may induce a serious misestimate. According to simulation results, delay time increases 21% while temperature increasing from 0 C to 125 C, and increases 2X while supply voltage decreasing from IV to 0.5V in 90nm process. Thus a simple linear extended logical effort g, I/g=(m(t)t+b(t))V(DD)+C, supporting for temperature t and supply voltage V(DD) variations is presented. The proposed model enables designers to estimate the logic path delay and to optimize an N-stage logic network under different temperature and supply voltage conditions. After validation, the accuracy of this new extended logical effort model can achieve about 90%.en_US
dc.language.isoen_USen_US
dc.titleLogical Effort Model Extension with Temperature and Voltage Variationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal14TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATION OF ICS AND SYSTEMSen_US
dc.citation.spage85en_US
dc.citation.epage88en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000265212200016-
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