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dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorSou, Kuok-Panen_US
dc.contributor.authorChang, Jet-Rungen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.authorLi, Yuh-Jingen_US
dc.contributor.authorChen, Yi-Chenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorHsu, Ken-Yuhen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:22:27Z-
dc.date.available2014-12-08T15:22:27Z-
dc.date.issued2012en_US
dc.identifier.isbn978-0-8194-8905-0en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/15890-
dc.identifier.urihttp://dx.doi.org/82620Xen_US
dc.description.abstractWe report the observation of lasing action from optically pumped gallium nitride nanorod arrays in a quasicrystal pattern. The nanorods were fabricated from a GaN substrate by nanoimprint patterned etching, followed by epitaxial regrowth to form crystalline facets. The imprint was a 12-fold symmetric quasicrystal pattern. The regrowth grew a multiple quantum well core-shell structure on nanorods. The cathodoluminescent emission of quantum wells red shifts from the bottom to top region of nanorod. Under optical pumping, multiple lasing peaks were observed. The lasing modes formed by 12-fold symmetric photonic quasicrystal nanorod arrays are discussed.en_US
dc.language.isoen_USen_US
dc.titleLasing action in gallium nitride photonic quasicrystal nanorod arraysen_US
dc.typeProceedings Paperen_US
dc.identifier.doi82620Xen_US
dc.identifier.journalGALLIUM NITRIDE MATERIALS AND DEVICES VIIen_US
dc.citation.volume8262en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000302556100015-
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