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dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorTu, Po-Minen_US
dc.contributor.authorChang, Jet-Rungen_US
dc.contributor.authorChang, Wei-Tingen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:22:28Z-
dc.date.available2014-12-08T15:22:28Z-
dc.date.issued2012en_US
dc.identifier.isbn978-0-8194-8905-0en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/15891-
dc.identifier.urihttp://dx.doi.org/826222en_US
dc.description.abstractIn this study, we fabricated and compared the performance of LEDs of InGaN-based UV MQWs active region with ternary AlGaN and quaternary InAlGaN barrier layers. HRXRD and TEM measurements show the two barriers are consistent with the lattice, and smooth morphology of quaternary InAlGaN layer can be observed in AFM. The electroluminescence results indicate that the light performance of the InGaN-based UV LEDs can be enhanced effectively when the conventional LT AlGaN barrier layers are replaced by the InAlGaN barrier layers. Furthermore, simulation results show that InGaN-based UV LEDs with quaternary InAlGaN barrier exhibit higher radiative recombination rate about 62% and low efficiency droop about 13% at a high injection current. We attribute this change to a drastic improvement from increasing of carrier concentration and redistribution of carriers, because of reduction of scatterings due to better morphology in the transverse carrier transport through the InGaN/InAlGaN MQWs.en_US
dc.language.isoen_USen_US
dc.subjectUV LEDsen_US
dc.subjectefficiency droopen_US
dc.titleReduction of efficiency droop in InGaN-Based UV Light-Emitting Diodes with InAlGaN Barrieren_US
dc.typeProceedings Paperen_US
dc.identifier.doi826222en_US
dc.identifier.journalGALLIUM NITRIDE MATERIALS AND DEVICES VIIen_US
dc.citation.volume8262en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000302556100042-
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