標題: | Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier |
作者: | Tu, Po-Min Chang, Chun-Yen Huang, Shih-Cheng Chiu, Ching-Hsueh Chang, Jet-Rung Chang, Wei-Ting Wuu, Dong-Sing Zan, Hsiao-Wen Lin, Chien-Chung Kuo, Hao-Chung Hsu, Chih-Peng 光電系統研究所 電子物理學系 電子工程學系及電子研究所 光電工程學系 Institute of Photonic System Department of Electrophysics Department of Electronics Engineering and Institute of Electronics Department of Photonics |
公開日期: | 23-五月-2011 |
摘要: | The efficiency droop in InGaN-based UV light emitting device (LED) with AlGaN and InAlGaN barrier is investigated. Electroluminescence results indicate that the light performance of quaternary LEDs can be enhanced by 25% and 55% at 350 mA and 1000 mA, respectively. Furthermore, simulations show that quaternary LEDs exhibit 62% higher radiative recombination rate and low efficiency degradation of 13% at a high injection current. We attribute this improvement to increasing of carrier concentration and uniform redistribution of carriers. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3591967] |
URI: | http://dx.doi.org/10.1063/1.3591967 http://hdl.handle.net/11536/8841 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3591967 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 98 |
Issue: | 21 |
結束頁: | |
顯示於類別: | 期刊論文 |