標題: Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier
作者: Tu, Po-Min
Chang, Chun-Yen
Huang, Shih-Cheng
Chiu, Ching-Hsueh
Chang, Jet-Rung
Chang, Wei-Ting
Wuu, Dong-Sing
Zan, Hsiao-Wen
Lin, Chien-Chung
Kuo, Hao-Chung
Hsu, Chih-Peng
光電系統研究所
電子物理學系
電子工程學系及電子研究所
光電工程學系
Institute of Photonic System
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 23-May-2011
摘要: The efficiency droop in InGaN-based UV light emitting device (LED) with AlGaN and InAlGaN barrier is investigated. Electroluminescence results indicate that the light performance of quaternary LEDs can be enhanced by 25% and 55% at 350 mA and 1000 mA, respectively. Furthermore, simulations show that quaternary LEDs exhibit 62% higher radiative recombination rate and low efficiency degradation of 13% at a high injection current. We attribute this improvement to increasing of carrier concentration and uniform redistribution of carriers. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3591967]
URI: http://dx.doi.org/10.1063/1.3591967
http://hdl.handle.net/11536/8841
ISSN: 0003-6951
DOI: 10.1063/1.3591967
期刊: APPLIED PHYSICS LETTERS
Volume: 98
Issue: 21
結束頁: 
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