完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChang, DAen_US
dc.contributor.authorLin, Pen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:03:00Z-
dc.date.available2014-12-08T15:03:00Z-
dc.date.issued1995-12-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.360418en_US
dc.identifier.urihttp://hdl.handle.net/11536/1595-
dc.description.abstractZirconium titanate (ZrTiO4) thin films (200-260 nm) on p-type (100) Si substrates were prepared using radio-frequency sputter deposition at room temperature in atmosphere of various O-2/Ar mixing ratio (from 0/100 to 20/80). All films exhibited a (020) preferred orientation and small grain size with increasing O-2/Ar ratio, as shown by x-ray diffraction. The variations of dielectric constant, fixed oxide charge, and interface trapped charge with O-2/Ar ratio are studied with an Al/ZrTiO4/Si structure. The refractive index and dielectric constant varied in ranges 2.34-2.26 and 20-16 for the as-deposited films. Within the range investigated, crystallinity appears to have a stronger influence on the densities of charge-trapping centers in the films than oxygen stoichiometry, and the latter may determine the leakage current density. A remarkable two orders of magnitude decrease in leakage current to 5.6X10(-9) A/cm(2) at 0.1 MV/cm and an increase in breakdown field beyond 1.2 MV/cm are observed in the film deposited without oxygen after a 400 degrees C annealing in air for 1 h. The current transport in ZrTiO4 film is dominated by the Poole-Frenkel mechanism. (C) 1995 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleEffects of oxygen-argon mixing on the electrical and physical properties of ZrTiO4 films sputtered on silicon at low temperatureen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.360418en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume78en_US
dc.citation.issue12en_US
dc.citation.spage7103en_US
dc.citation.epage7108en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995TK56200033-
dc.citation.woscount25-
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