完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Huang, CS | en_US |
dc.contributor.author | Tseng, TY | en_US |
dc.contributor.author | Chung, BC | en_US |
dc.contributor.author | Tsai, CH | en_US |
dc.contributor.author | Hsu, SS | en_US |
dc.contributor.author | Lin, IN | en_US |
dc.date.accessioned | 2014-12-08T15:03:00Z | - |
dc.date.available | 2014-12-08T15:03:00Z | - |
dc.date.issued | 1995-12-15 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.360427 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/1596 | - |
dc.description.abstract | Superconducting YBa2Cu3O7-x films having smooth surfaces were successfully synthesized by a microwave plasma-enhanced pulsed laser deposition (PEPLD) process. Particulates that frequently occurred in films grown by the conventional PLD process were effectively eliminated. The films were epitaxial-like. The c-axis was perpendicular to the films' surface, the a and b axes were aligned in the films' plane, and the onset and zero of the transition temperature were at T-c=90 K and T-c0=86 K, respectively. Optical emission spectroscopy indicated that the presence of oxygen plasma not only reexcited the laser-induced species via the collision process, but also produced abundant atomic oxygen in PEPLD process. The surface reaction kinetics for the formation of the thin-film process was thus greatly enhanced, which substantially improved the thin-film quality. (C) 1995 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Modification on the surface of superconducting YBa2Cu3O7-x films by microwave plasma-enhanced pulsed laser deposition | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.360427 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 78 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 7181 | en_US |
dc.citation.epage | 7185 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1995TK56200044 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |