完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | CHIN, A | en_US |
dc.contributor.author | LIN, BC | en_US |
dc.contributor.author | GU, GL | en_US |
dc.contributor.author | HSIEH, KY | en_US |
dc.date.accessioned | 2014-12-08T15:03:00Z | - |
dc.date.available | 2014-12-08T15:03:00Z | - |
dc.date.issued | 1995-12-11 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.115336 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/1600 | - |
dc.description.abstract | Spontaneously formed long-range Al-rich and Ga-rich AlxGa1-xAs/AlyGa1-yAs superlattice in(111)A was demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in 0.75 mu m Al0.30Ga0.70As grown on (111)A GaAs substrates at 640 degrees C. In contrast, none of the above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. 15 K photoluminescence (PL) showed a 31 meV redshift and six times peak intensity enhancement in layers grown on (111)A substrates to that on (100). A reduced long-range compositional modulation can be achieved by growth at higher temperatures and is shown in the finer and moderately modulating (111)A Al0.40Ga0.60As grown at 700 degrees C. A 15 K PL linewidth of 17 meV was achieved in 700 degrees C grown (111)A A(0.40)Ga(0.60)As that is the narrowest reported linewidth for (111)A AlGaAs. (C) 1995 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | SPONTANEOUSLY FORMED LONG-RANGE AL-RICH AND GA-RICH ALXGA1-XAS/ALYGA1-YAS SUPERLATTICE AND OPTICAL-PROPERTIES ENHANCEMENT IN (111)A ALGAAS | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.115336 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 67 | en_US |
dc.citation.issue | 24 | en_US |
dc.citation.spage | 3617 | en_US |
dc.citation.epage | 3619 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1995TJ30400033 | - |
dc.citation.woscount | 7 | - |
顯示於類別: | 期刊論文 |