標題: | SPONTANEOUS FORMATION OF AL RICH AND GA RICH ALXGA1-XAS/ALYGA1-YAS SUPERLATTICE AND STRONG ENHANCEMENT OF OPTICAL-PROPERTIES |
作者: | CHIN, A HSIEH, KY LIN, HY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 10-十月-1994 |
摘要: | Long range composition ordering and spontaneous formation of Al rich and Ga rich AlxGa1-xAs/AlyGa1-yAs superlattice were demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in a 280 angstrom Al0.4GaAs quantum well laser diode heterostructure with Al0.7GaAs barriers grown on (111)B GaAs substrates. On the contrary, none of above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. More evidence is shown in the (111)B Al0.7GaAs barriers which were disordered due to a high growth temperature and did not show any superstructure. 10 K photoluminescence was shown with 32 meV redshift and a 12-times peak intensity enhancement in (111)B orientation. (C) 1994 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.112817 http://hdl.handle.net/11536/2284 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.112817 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 65 |
Issue: | 15 |
起始頁: | 1921 |
結束頁: | 1923 |
顯示於類別: | 期刊論文 |