標題: SPONTANEOUS FORMATION OF AL RICH AND GA RICH ALXGA1-XAS/ALYGA1-YAS SUPERLATTICE AND STRONG ENHANCEMENT OF OPTICAL-PROPERTIES
作者: CHIN, A
HSIEH, KY
LIN, HY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 10-Oct-1994
摘要: Long range composition ordering and spontaneous formation of Al rich and Ga rich AlxGa1-xAs/AlyGa1-yAs superlattice were demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in a 280 angstrom Al0.4GaAs quantum well laser diode heterostructure with Al0.7GaAs barriers grown on (111)B GaAs substrates. On the contrary, none of above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. More evidence is shown in the (111)B Al0.7GaAs barriers which were disordered due to a high growth temperature and did not show any superstructure. 10 K photoluminescence was shown with 32 meV redshift and a 12-times peak intensity enhancement in (111)B orientation. (C) 1994 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.112817
http://hdl.handle.net/11536/2284
ISSN: 0003-6951
DOI: 10.1063/1.112817
期刊: APPLIED PHYSICS LETTERS
Volume: 65
Issue: 15
起始頁: 1921
結束頁: 1923
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