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dc.contributor.authorChang, Yuan-Mingen_US
dc.contributor.authorHuang, Jheng-Mingen_US
dc.contributor.authorLin, Chih-Mingen_US
dc.contributor.authorLee, Hsin-Yien_US
dc.contributor.authorChen, San-Yuanen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2014-12-08T15:22:43Z-
dc.date.available2014-12-08T15:22:43Z-
dc.date.issued2012-04-12en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://hdl.handle.net/11536/16041-
dc.description.abstractAn effective method of controlling the density of ZnO nanopillars (ZnO-NPs) by using the self-assembled silver nanoislands as the growth catalyst is demonstrated. We were able to vary the density of the ZnO-NPs to within the range of similar to 10-30 mu m(-2) by properly manipulating the size distribution of the silver nanoislands partially covering the Si substrates. Continuous silver film can also be used as the catalyst to facilitate the growth of ZnO islands and pillars on Si substrates, albeit with much less control of the resultant density and morphological appearances. The field emission measurements indicate that the performance of field emission for ZnO-NPs can be. improved markedly by reducing the density of the ZnO-NPs. The turn-on field of the low-density ZnO-NPs was as low as 2.39 V/mu m with a corresponding current density of 10 mu A/cm(2) and a field enhancement factor (beta value) of similar to 3500. The enhancement of field emission characteristics is attributed to the much reduced field screen effect by properly controlled density of the ZnO-NPs.en_US
dc.language.isoen_USen_US
dc.titleOptoelectronic Properties of Density-Controlled ZnO Nanopillar Arraysen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume116en_US
dc.citation.issue14en_US
dc.citation.epage8332en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department加速器光源科技與應用學位學程zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentMaster and Ph.D. Program for Science and Technology of Accelrrator Light Sourceen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000302591300092-
dc.citation.woscount10-
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