標題: Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient
作者: Wu, Chun-Yu
Cheng, Huang-Chung
Wang, Chao-Lung
Liao, Ta-Chuan
Chiu, Po-Chun
Tsai, Chih-Hung
Fang, Chun-Hsiang
Lee, Chung-Chun
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 9-四月-2012
摘要: The nitrogen ambient encapsulation (NAE) technique is introduced to improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistors under positive gate bias stress (PGBS). For the NAE devices, the threshold voltage (Vth) shift is significantly decreased from 1.88 to 0.09 V and the reduction of saturation drain current is improved from 15.75 to 5.61 mu A as compared to the bare a-IGZO counterparts after PGBS. These improvements are attributed to the suppression of negatively charged oxygen adsorption on the a-IGZO backsurface and thereby well maintain the channel potential of NAE devices, which in turn sustain the Vth during PGBS. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3702794]
URI: http://dx.doi.org/152108
http://hdl.handle.net/11536/16045
ISSN: 0003-6951
DOI: 152108
期刊: APPLIED PHYSICS LETTERS
Volume: 100
Issue: 15
結束頁: 
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