標題: | Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient |
作者: | Wu, Chun-Yu Cheng, Huang-Chung Wang, Chao-Lung Liao, Ta-Chuan Chiu, Po-Chun Tsai, Chih-Hung Fang, Chun-Hsiang Lee, Chung-Chun 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 9-四月-2012 |
摘要: | The nitrogen ambient encapsulation (NAE) technique is introduced to improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistors under positive gate bias stress (PGBS). For the NAE devices, the threshold voltage (Vth) shift is significantly decreased from 1.88 to 0.09 V and the reduction of saturation drain current is improved from 15.75 to 5.61 mu A as compared to the bare a-IGZO counterparts after PGBS. These improvements are attributed to the suppression of negatively charged oxygen adsorption on the a-IGZO backsurface and thereby well maintain the channel potential of NAE devices, which in turn sustain the Vth during PGBS. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3702794] |
URI: | http://dx.doi.org/152108 http://hdl.handle.net/11536/16045 |
ISSN: | 0003-6951 |
DOI: | 152108 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 100 |
Issue: | 15 |
結束頁: | |
顯示於類別: | 期刊論文 |