Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wu, Chun-Yu | en_US |
dc.contributor.author | Cheng, Huang-Chung | en_US |
dc.contributor.author | Wang, Chao-Lung | en_US |
dc.contributor.author | Liao, Ta-Chuan | en_US |
dc.contributor.author | Chiu, Po-Chun | en_US |
dc.contributor.author | Tsai, Chih-Hung | en_US |
dc.contributor.author | Fang, Chun-Hsiang | en_US |
dc.contributor.author | Lee, Chung-Chun | en_US |
dc.date.accessioned | 2014-12-08T15:22:43Z | - |
dc.date.available | 2014-12-08T15:22:43Z | - |
dc.date.issued | 2012-04-09 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/152108 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/16045 | - |
dc.description.abstract | The nitrogen ambient encapsulation (NAE) technique is introduced to improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistors under positive gate bias stress (PGBS). For the NAE devices, the threshold voltage (Vth) shift is significantly decreased from 1.88 to 0.09 V and the reduction of saturation drain current is improved from 15.75 to 5.61 mu A as compared to the bare a-IGZO counterparts after PGBS. These improvements are attributed to the suppression of negatively charged oxygen adsorption on the a-IGZO backsurface and thereby well maintain the channel potential of NAE devices, which in turn sustain the Vth during PGBS. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3702794] | en_US |
dc.language.iso | en_US | en_US |
dc.title | Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 152108 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 100 | en_US |
dc.citation.issue | 15 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000303128000033 | - |
dc.citation.woscount | 1 | - |
Appears in Collections: | Articles |
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