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dc.contributor.authorGANIKHANOV, Fen_US
dc.contributor.authorLIN, GRen_US
dc.contributor.authorCHEN, WCen_US
dc.contributor.authorCHANG, CSen_US
dc.contributor.authorPAN, CLen_US
dc.date.accessioned2014-12-08T15:03:00Z-
dc.date.available2014-12-08T15:03:00Z-
dc.date.issued1995-12-04en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.115248en_US
dc.identifier.urihttp://hdl.handle.net/11536/1604-
dc.description.abstractWe have investigated photoexcited carrier lifetimes in arsenic-ion-implanted semi-insulating GaAs by time-resolved reflectivity measurements. Subpicosecond carrier lifetimes (220 to 550 fs) which do not exhibit apparent dosage dependence for samples bombarded with 200 keV arsenic ions at increasing dosages in the range of 10(12) and 10(16) ions/cm(2) are reported. The shortest carrier lifetime was observed for the sample irradiated at 10(13) ions/cm(-2). These are the shortest lifetimes ever observed for ion-damaged GaAs and comparable to those of low-temperature molecular beam epitaxially grown GaAs, which is also nonstoichiometric with excess-arsenic-related, deep-level defects. (C) 1995 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleSUBPICOSECOND CARRIER LIFETIMES IN ARSENIC-ION-IMPLANTED GAASen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.115248en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume67en_US
dc.citation.issue23en_US
dc.citation.spage3465en_US
dc.citation.epage3467en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:A1995TH28700032-
dc.citation.woscount57-
Appears in Collections:Articles


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